Solution-processed Cu(In,Ga)(Se,S)2 solar cells prepared via a surface sulfurization process
| Autor: | Jen-Cheng Sung, Chung-Hsin Lu, Rajan Kumar Singh, Chang-Ying Ou |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Passivation Band gap General Chemical Engineering Energy conversion efficiency Analytical chemistry chemistry.chemical_element 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Sulfur 0104 chemical sciences chemistry Vacancy defect Surface roughness Grain boundary 0210 nano-technology Selenium |
| Zdroj: | Journal of the Taiwan Institute of Chemical Engineers. 110:41-50 |
| ISSN: | 1876-1070 |
| DOI: | 10.1016/j.jtice.2020.02.007 |
| Popis: | The photovoltaic (PV) characteristics of solution-coated Cu(In,Ga)Se2 films were effectively improved via a surface sulfurization in this study to overcome the complexity to control the appropriated amounts of sulfur ionsduring the sulfurization process.After sulfurization treatment, the Cu(In,Ga)(Se,S)2 films with double-graded band gap were obtained because the incorporation of sulfur-ion intoCu(In,Ga)Se2 films increasedthe band gap near the surface region.The formation of selenium vacancies in Cu(In,Ga)(Se,S)2 films were effectively diminished by adjusting H2S concentration. Band gap gradients and defect passivation reduced the interface recombination and improved the carrier collection in the devices. As the H2S concentration was raised from 0 to 1.0 vol%, the open-circuit voltage was increased from 541 to 596 mV, thereby boosting the conversion efficiency from 10.71to 12.40%. The reduction of vacancy defects and surface roughness suppressed the formation of shunt paths, resulting ina decrease indiode factor and leakage current. Compared with the Cu(In,Ga)(Se,S)2 films deriving from vacuum processes, solution-coated Cu(In,Ga)(Se,S)2 films with relatively small grains facilitated the sulfur diffusion along the grain boundaries into the films.Therefore, the appropriate H2S concentration used in the solution-coated Cu(In,Ga)(Se,S)2 films was less than vacuum processes. This investigation demonstrates that adjusting the concentrationof H2S is vital for enhancing the PV properties of thesolution-processed Cu(In,Ga)(Se,S)2 PV cells. |
| Databáze: | OpenAIRE |
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