PECVD Chamber Cleaning End Point Detection (EPD) Using Optical Emission Spectroscopy Data
Autor: | Ho Jae Lee, Sang Jeen Hong, Dong-Sun Seo, Gary S. May |
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Rok vydání: | 2013 |
Předmět: |
Materials science
Semiconductor device fabrication business.industry Analytical chemistry chemistry.chemical_element End point detection Electronic Optical and Magnetic Materials chemistry Plasma-enhanced chemical vapor deposition Plasma chemistry Fluorine Optoelectronics Optical emission spectroscopy Electrical and Electronic Engineering business |
Zdroj: | Transactions on Electrical and Electronic Materials. 14:254-257 |
ISSN: | 1229-7607 |
DOI: | 10.4313/teem.2013.14.5.254 |
Popis: | In-situ optical emission spectroscopy (OES) is employed for PECVD chamber monitoring. OES is used as an addon sensor to monitoring and cleaning end point detection (EPD). On monitoring plasma chemistry using OES, the process gas and by-product gas are simultaneously monitored. Principal component analysis (PCA) enhances the capability of end point detection using OES data. Through chamber cleaning monitoring using OES, cleaning time is reduced by 53%, in general. Therefore, the gas usage of fluorine is also reduced, so satisfying Green Fab challenge in semiconductor manufacturing. |
Databáze: | OpenAIRE |
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