| Autor: |
C. Delage, P. Givelin, J. Lin-Kwang, Marise Bafleur, J.-M. Dorkel, J. Hamid, Nicolas Nolhier |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198). |
| DOI: |
10.1109/bipol.1998.741922 |
| Popis: |
In this paper, we first present a methodology for the application of two-dimensional device simulation to ESD events. The correlation of ESD simulation results with experimental data is illustrated by the example of a grounded base n-p-n transistor. Secondly, we present a novel double-polarity ESD protection structure for smart power applications, the Mirrored Lateral SCR (MILSCR): simulated and experimental results are compared. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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