Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology
| Autor: | Jury Sandrini, Maxime Thammasack, Michele De Marchi, Pierre-Emmanuel Gaillardon, Tugba Demirci, Yusuf Leblebici, Marios Barlas, Giovanni De Micheli, Davide Sacchetto |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering business.industry Order (ring theory) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology Chip 01 natural sciences Resistive random-access memory CMOS 0103 physical sciences Electrode Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering Crossbar switch 0210 nano-technology business Order of magnitude Voltage |
| Zdroj: | IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:339-351 |
| ISSN: | 2156-3365 2156-3357 |
| Popis: | This work presents the co-integration of resistive random access memory crossbars within a 180 nm Read-Write CMOS chip. $ {\rm TaO}_{ {\rm x}}$ -based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of-the-Line. Two different strategies, consisting in insertion of an $ {\rm Al}_{2} {\rm O}_{3}$ tunnel barrier layer and the design of a dedicated CMOS read circuit, have been developed in order to increase the cell high-to-low resistance ratio of a factor of 1000 and to reduce the sneak-path current effects by one order of magnitude. The ReRAM cells have been integrated directly on a standard CMOS foundry chip, enabling low cost ReRAM-CMOS integration. The integrated memories show a set and reset voltages of $-{1}$ and 1.3 V, respectively. The measured operating voltages are compatible for low-voltage applications. |
| Databáze: | OpenAIRE |
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