| Autor: |
J. Kearney, T.T. Lee, J.L. Singer, P. Laux, J.F. Bass, Saied Tadayon, O.A. Aina, H.C. Huang, S.W. Chen |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium. |
| DOI: |
10.1109/mcs.1994.332147 |
| Popis: |
A 94-GHz multifunction monolithic microwave integrated circuit (MMIC) incorporating two different materials on the same chip has been developed. This MMIC contains a three-stage pseudomorphic high-electron mobility transistor (P-HEMT) low-noise amplifier (LNA) and a balanced gallium arsenide (GaAs) Schottky diode mixer. The MMIC achieved a 7-dB conversion gain-with 7.3-dB noise figure over the 93- to 94.5-GHz band. It was fabricated using vacuum passivation technology for the LNA to alleviate possible traps at the SiN-GaAs interface. The technology for incorporating two different materials on the same chip is sufficiently flexible to be applied to analog/digital ICs and microwave/optical optoelectronic ICs as well. This is believed to be the first report of a W-band multifunction MMIC having different materials on the same chip. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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