Raman scattering in InAs1-xSbxalloys grown on GaAs by molecular beam epitaxy
| Autor: | A. G. de Oliveira, A. G. Norman, Ian T. Ferguson, Y B Li, S S Dosanjh, R A Stradling, R Zallen |
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| Rok vydání: | 1992 |
| Předmět: |
Condensed matter physics
Phonon Chemistry Alloy Analytical chemistry engineering.material Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Microstructure Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Materials Chemistry symbols engineering Electrical and Electronic Engineering Raman spectroscopy Raman scattering Molecular beam epitaxy Solid solution |
| Zdroj: | Semiconductor Science and Technology. 7:567-570 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/4/022 |
| Popis: | Phonon energies in InAs1-xSbx ternary alloys, grown on GaAs by molecular beam epitaxy, have been studied by Raman scattering. The microstructure for this alloy system depends strongly on the growth temperature. For growth temperatures above 400 degrees C, transmission electron microscopy (TEM) shows the alloy epilayer to be homogeneous. Raman spectra of these homogeneous InAsSb alloys show a strong InAs-like longitudinal optical (LO) phonon line, as well as an InSb-like LO line, throughout the composition range. The frequency of the InAs-like LO phonon varies linearly with composition. For growth temperatures below 400 degrees C and compositions near the middle of the range, an interleaved platelet structure, arising from phase separation, is observed in TEM. Effects of phase separation in these alloys have been observed in the Raman spectra. |
| Databáze: | OpenAIRE |
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