New structure of field-controlled thyristor with lateral channel

Autor:	Lin Xin-ming, Ye Runtao, Chen Min, Zheng Hai-dong
Rok vydání:	2003
Předmět:	Integrated gate-commutated thyristor Switching time Gate turn-off thyristor Materials science Static induction thyristor law business.industry Thyristor Optoelectronics MOS-controlled thyristor business law.invention
Zdroj:	[1992] Proceedings of the IEEE International Symposium on Industrial Electronics.
DOI:	10.1109/isie.1992.279699
Popis:	The authors describe a new structure of field-controlled thyristor with a lateral channel (LFCT) which has been developed successfully. This device possesses of some advantages, such as manufacture simplicity, high blocking gain, high switching speed and compatibility with ICs in monolithic mode. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dfed5f792fdf5d3e4462408549a8f2eb https://doi.org/10.1109/isie.1992.279699 Zobrazit plný text záznamu