Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
| Autor: | Aidong Li, Mei Wang, Ping Han, Di Wu, Yan-Qiang Cao, Tian-Cheng Lai, Xi-Rui Zhao |
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| Rok vydání: | 2019 |
| Předmět: |
Nanocomposite
Materials science business.industry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces General Chemistry Trapping Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen 0104 chemical sciences Surfaces Coatings and Films Amorphous solid Atomic layer deposition chemistry Optoelectronics 0210 nano-technology business Layer (electronics) Quantum tunnelling |
| Zdroj: | Applied Surface Science. :423-427 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.10.197 |
| Popis: | A charge trapping memory device using Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 (TATiAT) nanocomposite high-k dielectrics as charge trapping layer (CTL) and amorphous Al2O3 as the tunneling and blocking layers has been investigated, in which all the high-k dielectric films were fabricated by atomic layer deposition (ALD) technique. A large memory window of 10.0 V with higher charge trap density of 1.10 × 1013 cm−2 at gate voltage of ±10 V has been achieved. The better storage characteristic is attributed to the inter-diffusion between nanocomposite high-k oxides and the formation of more oxygen vacancies in CTL. The device shows the fast P/E speed and excellent endurance characteristics. A 70% initial memory window can be maintained after 10 years of retention by using the extrapolation method. The large conduction band offsets of 1.02 eV between TATiAT and Al2O3 is beneficial to retention characteristic due to the deep trap level. |
| Databáze: | OpenAIRE |
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