Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs
| Autor: | Jae-Hyung Jang, Geun Yeom Young, Dae-Hyun Kim, Sang Park Duk, Tae-Woo Kim, Byeong Lim Ok, Jin-Koo Rhee, Jong-In Song |
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| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Materials science Transistor Analytical chemistry High-electron-mobility transistor Subthreshold slope Electronic Optical and Magnetic Materials law.invention Threshold voltage Atomic layer deposition law Etching (microfabrication) Electrical and Electronic Engineering Reactive-ion etching |
| Zdroj: | IEEE Electron Device Letters. 28:1086-1088 |
| ISSN: | 0741-3106 |
| Popis: | The characteristics of 0.15- mum InAlAs/InGaAs pseudomorphic high-electron mobility transistors (p-HEMTs) that were fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology were investigated. As compared with the RIE, the ALET used a much lower plasma energy and thus produced much lower plasma-induced damages to the surface and bulk of the In0.52AI0.48As barrier and showed a much higher etch selectivity (~70) of the InP spacer against the In0.52Al0.48As barrier. The 0.15-mum InAlAs/InGaAs p-HEMTs that were fabricated using the ALET exhibited improved Gm,max (1.38 S/mm), IONn/IOFF(1.18X104), drain-induced barrier lowering (80 mWV), threshold voltage uniformity (Vth,avg = -190 mV and alpha = 15 mV), and ftau (233 GHz), mainly due to the extremely low plasma-induced damage in the Schottky gate area. |
| Databáze: | OpenAIRE |
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