Three-level Gate Drive Technique for Enhancing Switching Loss Reduction in Triple-Gate IGBTs

Autor:	Tatsunori Sakano, Kento Adachi, Tomoaki Inokuchi, Kazuto Takao, Yoko Iwakaji, Ryohei Gejo, Tomoko Matsudai
Rok vydání:	2022
Zdroj:	2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dfd2b34366e34e3614708fa7c405184e https://doi.org/10.1109/ispsd49238.2022.9813666 Zobrazit plný text záznamu