Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure
| Autor: | M. A. Remennyi, A. A. Lavrov, N. D. Il’inskaya, N. G. Karpukhina, S. A. Karandashev, B. A. Matveev, N. M. Stus, A. A. Usikova |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 010401 analytical chemistry Heterojunction Semiconductor device Photoelectric effect Atmospheric temperature range Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials Photodiode law.invention law Electrical resistivity and conductivity 0103 physical sciences Optoelectronics Luminescence business Diode |
| Zdroj: | Semiconductors. 50:646-651 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616050122 |
| Popis: | The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n +-InAs with the n +-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|