All-epitaxial growth of low-loss, large-aperture orientation-patterned gallium arsenide (OPGaAs)

Autor:	Lee Mohnkern, Daniel C. Creeden, Peter G. Schunemann, Thomas M. Pollak, Alice Vera
Rok vydání:	2009
Předmět:	OPOS Materials science business.industry Orientation (computer vision) Nonlinear optics Laser pumping Epitaxy Gallium arsenide chemistry.chemical_compound Semiconductor Optics chemistry Physical vapor deposition business
Zdroj:	Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest.
Popis:	Improved reactor design and optimized process parameters have enabled all-epitaxial growth of large diameter (3-inch), large aperture (>1.5mm thick), and low-loss (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dfcf3d8469d26f38087a7362511c098a https://doi.org/10.1364/aiom.2009.awa2 Zobrazit plný text záznamu