Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon
| Autor: | Manabu Itsumi, Takemi Ueki, Masahiko Maeda, Satoshi Tazawa |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Thermal oxidation
Void (astronomy) geography Materials science geography.geographical_feature_category Silicon technology industry and agriculture Oxide General Physics and Astronomy Mineralogy chemistry.chemical_element chemistry.chemical_compound chemistry Thermal oxide Octahedron Ridge Composite material Oxidation rate |
| Zdroj: | Journal of Applied Physics. 86:2330-2333 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.371050 |
| Popis: | We found that thermal oxidation of (001)-oriented Czochralski silicon produces oxide ridges which surround the oxide pits above the grown-in defects (or octahedral void defects), whereas thermal oxidation of (111)-oriented Czochralski silicon produces oxide pits solely above the octahedral void defects. When the thermal oxide layers on (001)-oriented silicon were 400 nm, the heights of the oxide ridges were about 10–20 nm. Considering that the side walls of the octahedral void defects are (111) oriented, we assume that the oxidation rate of (111)-oriented silicon exceeding that of (001)-oriented silicon is closely related to the formation of oxide ridges. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|