Thickness dependent band gap of Bi2-xSbxTe3 (x = 0, 0.05, 0.1) thin films

Autor:	P. H. Soni, C. F. Desai, M. M. Patel
Rok vydání:	2016
Předmět:	Crystal Optics Materials science Nanostructure Absorption spectroscopy business.industry Band gap Analytical chemistry Narrow-gap semiconductor Thin film business Absorption (electromagnetic radiation) Solid solution
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.4947890
Popis:	Thin films of Bi2Te3(Sb) were prepared on alkali halide crystal substrates. Sb content and the film thickness were varied. Bi2Te3 is a narrow gap semiconductor. Bi-Sb is a continuous solid solution of substitutional type and Sb therefore was used to test its effect on the band gap. The film thickness variation was also taken up. The infra-red absorption spectra were used in the wave number range 400 cm−1 to 4000 cm−1. The band gap obtained from the absorption data was found to increase with decreasing thickness since the thickness range used was from 30 nm to 170 nm. This is a range corresponding to nanostructures and hence quantum size effect was observed as expected. The band gap also exhibited Sb content dependence. The detail results are have been reported and explained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dfc7d35048eef60c5c738c67cc1d3bf8 https://doi.org/10.1063/1.4947890 Zobrazit plný text záznamu