Bonding of silicon to silicon by solid‐phase epitaxy

Autor:	Jayant K. Bhagat, David Byrum Hicks
Rok vydání:	1987
Předmět:	Microprobe Materials science Silicon Metallurgy General Physics and Astronomy chemistry.chemical_element Germanium Epitaxy Platinum silicide chemistry.chemical_compound chemistry Anodic bonding Aluminium Wafer Composite material
Zdroj:	Journal of Applied Physics. 61:3118-3120
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.337816
Popis:	Using concepts of solid‐phase epitaxy, a sealed and structurally sound bond between two silicon wafers has been achieved with aluminum, platinum silicide, or germanium as the transport medium. Only in the case of aluminum did microprobe analysis show an interface clear of the bonding medium. The bond quality was tested by bonding wafers of different crystal orientation and then intentionally cleaving and fracturing the bonded wafers. A clean fracture was obtained without the wafers falling apart. Leak test of sealed cavities suggests that a hermetically sealed enclosure can be achieved with this technique.
Databáze:	OpenAIRE
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