High sensitivity background absorption measurements in semiconductors

Autor:	Nathan Giannini, Alexander R. Albrecht, Mansoor Sheik-Bahae, Chengao Wang, Seth D. Melgaard, J.R. Silva
Rok vydání:	2015
Předmět:	Condensed Matter::Materials Science Materials science Semiconductor business.industry Laser cooling Thermal Optoelectronics Quantum efficiency Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect business Absorption (electromagnetic radiation) Sensitivity (electronics)
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.2080087
Popis:	Laser cooling in InGaP|GaAs double heterostructures (DHS) has been a sought after goal. Even though very high external quantum efficiency (EQE) has been achieved, background absorption has remained a bottleneck in achieving net cooling. The purpose of this study is to gain more insight into the source of the background absorption for InGaP|GaAs DHS as well as GaAs|AlGaAs DBRs by employing an excite-probe thermal Z-scan measurement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dfb9abeb75a725ceb7cdca664bda0eb4 https://doi.org/10.1117/12.2080087 Zobrazit plný text záznamu