Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices
| Autor: | Hyo-Ki Hong, Tran Nam Trung, Dong-Bum Seo, Chan-Cuk Hwang, Zonghoon Lee, Dong-Ok Kim, Eui-Tae Kim |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Dielectric strength business.industry Graphene Gate dielectric 02 engineering and technology General Chemistry Semiconductor device Dielectric Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Organic semiconductor law Optoelectronics General Materials Science 0210 nano-technology business High-κ dielectric |
| Zdroj: | Carbon. 158:513-518 |
| ISSN: | 0008-6223 |
| Popis: | New high-k gate dielectrics are highly necessary in facilitating the continuous down-scaling of metal–oxide–semiconductor devices to the sub-10 nm range. This study presents ultrathin organic hydrocarbon (HC) films as a novel high-k gate insulator for metal–insulator–semiconductor (MIS) devices. During inductively-coupled plasma chemical vapor deposition with CH4 and H2 gases, the growth temperature greatly affects the structure of the carbon layers and consequently their dielectric characteristics. Specifically, sp2-rich dielectric HC layers are formed below 600 °C, whereas highly-ordered sp2-hybridized graphene is formed at 950 °C. The k value of the resulting HC films increases up to a maximum value of 90 at 350 °C. Moreover, the MIS devices exhibit excellent gate-insulating properties, including almost no hysteresis in the capacitance–voltage curve, low leakage current, and high dielectric strength, which surpass those of existing high-k gate oxides. These results reveal that the organic HC films are a promising next-generation high-k gate dielectric material for sub-10 nm node Si and organic semiconductor technologies. |
| Databáze: | OpenAIRE |
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