Stability factors of Darlington transistors†

Autor:	F. D. Morgan, L. N. S. Kunar
Rok vydání:	1984
Předmět:	Materials science business.industry Composite number Transistor Biasing law.invention Darlington transistor Control theory law Saturation current Optoelectronics Electrical and Electronic Engineering Resistor business Voltage Static induction transistor
Zdroj:	International Journal of Electronics. 57:491-497
ISSN:	1362-3060 0020-7217
DOI:	10.1080/00207218408938930
Popis:	Expressions giving the change in quiescent collector current due to variations in collector reverse saturation current. and base-emitter voltage have previously been derived for the Darlington composite transistor. In this paper these expressions arc used to obtain stability ratios that directly compare the stability of the Darlington composite transistor with that of a single transistor. A relationship is developed. incorporating these stability ratios, which shows that the Darlington composite is more stable than a single transistor to changes in Ic Bo.but with respect to changes in VBE, it is less stable. Furthermore, because these stability parameters are in opposition, their overall effect is to make the composite transistor about. 25% ( ± 10%) less stable than a single transistor when a proper choice of biasing resistors is made.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dfa7f09aae21cb11de12d2634383a6cf https://doi.org/10.1080/00207218408938930 Zobrazit plný text záznamu