Capacitance transient study of the metastableMcenter inn-type4H−SiC

Autor:	Anders Hallén, Bengt Gunnar Svensson, H. Kortegaard Nielsen
Rok vydání:	2005
Předmět:	Deep-level transient spectroscopy Materials science Proton business.industry Condensed Matter Physics Capacitance Fluence Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Metastability Silicon carbide Irradiation Atomic physics business
Zdroj:	Physical Review B. 72
ISSN:	1550-235X 1098-0121
Popis:	The metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1x10(12) cm(-2). The experimental procedures i ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::df9c02dc97310c2918ef5338f7ea15f7 https://doi.org/10.1103/physrevb.72.085208 Zobrazit plný text záznamu