Cu Bump Interconnections in 20.MU.m-Pitch at Low Temperature Utilizing Electroless Tin-Plating on 3D Stacked LSI

Autor:	Manabu Bonkohara, Yoshihiko Nemoto, Kenji Takahashi, Tadahiro Morifuji, Tomotoshi Sato, Manabu Tomisaka, Masahiro Sunohara, Yoshihiro Tomita
Rok vydání:	2003
Předmět:	Wire bonding Materials science General Chemical Engineering Diffusion Metallurgy chemistry.chemical_element General Chemistry Thermocompression bonding Copper Die (integrated circuit) chemistry Anodic bonding Electrode Interposer Composite material
Zdroj:	JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 36:119-125
ISSN:	1881-1299 0021-9592
DOI:	10.1252/jcej.36.119
Popis:	The electroless tin-plating on copper has the preferable characteristics for the thermal compression bonding, although it is easy to decrease in thickness by heating at the bonding because of the diffusion with copper. Therefore, the bonding profile was determined to have lower pre-heating to evaluate the bondability with copper-bumps dressed thin tin-caps in 20 μm-pitch- Then, the possibility of the interconnections in 20 μm-pitch was confirmed. Bonding temperature was 150°C and bonding force was 24.5 N. Finally, the tin-cap on a through-hole electrode (T-COTE) was performed in the electroless plating and the basic bonding condition was evaluated on the vertical interconnections. The results showed the sufficient joint between the copper electrodes through the Si die and the adjacent copper bumps on the interposer.
Databáze:	OpenAIRE
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