Photoreflectance study of GaMnAs layers grown by MBE
| Autor: | I. Martínez-Velis, M. Ramírez-López, C. Vázquez-López, Máximo López-López, Y. Kudriatsev, J. S. Rojas-Ramírez, S. Gallardo-Hernández, Victor-Tapio Rangel-Kuoppa, Sergio Jiménez-Sandoval, R. Contreras-Guerrero |
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| Rok vydání: | 2011 |
| Předmět: |
Diffraction
Condensed matter physics Chemistry Band gap Analytical chemistry Condensed Matter Physics Spectral line Inorganic Chemistry Secondary ion mass spectrometry Condensed Matter::Materials Science symbols.namesake Hall effect Electric field Materials Chemistry symbols Raman spectroscopy Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 323:344-347 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2010.12.041 |
| Popis: | GaMnAs layers were grown by MBE on GaAs (0 0 1) substrates. The structural properties of the epilayers were studied by atomic force microscopy, secondary ion mass spectroscopy, high-resolution X-ray diffraction, and Raman spectroscopy. Photoreflectance spectra at room temperature exhibited Franz–Keldysh oscillations; from an analysis of these oscillations we obtained the built-in internal electric field and the bandgap energy of the GaMnAs epilayers. We studied the variation of these parameters as a function of Mn in the epilayers. In addition the holes concentration in the samples was extracted from the bandgap narrowing value and compared with the carrier density obtained by the Hall measurements. |
| Databáze: | OpenAIRE |
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