Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs

Autor:	Arvydas Matulionis, J. Liberis, A. Vertiatchikh, M. Ramonas, Xiaodong Chen, L.F. Eastman, I. Matulionien, Y. J. Sun
Rok vydání:	2005
Předmět:	Condensed Matter::Materials Science Noise temperature Condensed matter physics Phonon Chemistry Electron temperature Electric power Dissipation Fermi gas Noise (electronics) Microwave
Zdroj:	physica status solidi (c). 2:2585-2588
ISSN:	1610-1634
DOI:	10.1002/pssc.200461374
Popis:	Dependence of hot-electron noise temperature on supplied electric power is measured at room temperature for an AlGaN/AlN/GaN channel with a two-dimensional electron gas (1 × 1013 cm–2). The results are interpreted in an electron-temperature approximation for a 5-subband model with electron-gas degeneracy taken into account. The fitting is obtained when non-equilibrium (hot) longitudinal optical (LO) phonons are taken into account. The estimated effective occupancy of the involved LO-phonon states exceeds the equilibrium one more than 30 times at 2000 K electron temperature. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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