Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantation

Autor:	Aaron O. Vanderpool, M. Taylor
Rok vydání:	2005
Předmět:	Nuclear and High Energy Physics Materials science chemistry Co implantation Vacancy defect Inorganic chemistry Fluorine chemistry.chemical_element Boron diffusion Boron Instrumentation Arsenic
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:142-147
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2005.04.089
Popis:	A method to reduce the diffusion of boron in ultra-shallow junctions (USJ) has been found using the co-implantation of fluorine and carbon. In this 24 designed experiment a 40% reduction of B diffusion in the presence of a shallow F and C implant was found over the use of F alone. In addition another 10% reduction of B diffusion can be obtained if a medium dose arsenic implant is preformed before F and B implantation. It has been found that implanting in this order significantly alters the defect structure of the USJ and suggests that F trapped in the lattice after anneal may be tied up in vacancy fluorine clusters which increase B activation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::df616d72aa0fc9fc1c3fdd7de0c8aa58 https://doi.org/10.1016/j.nimb.2005.04.089 Zobrazit plný text záznamu Full Text from ScienceDirect