Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution
| Autor: | Che-Kai Lin, Atanu Das, Yi-Cherng Ferng, L. B. Chang, C. Y. Chen |
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| Rok vydání: | 2010 |
| Předmět: |
chemistry.chemical_classification
Materials science Sulfide Passivation General Chemical Engineering Phosphorus Oxide Analytical chemistry chemistry.chemical_element chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Electrochemistry Effective treatment General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry Varicap Diode |
| Zdroj: | Electrochemical and Solid-State Letters. 13:H350 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.3473728 |
| Popis: | The effect of surface passivation using (NH 4 ) 2 S and (NH 4 ) 2 S/P 2 S 5 on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas (MSM-2DEG) varactor was investigated. The surface property, capacitance ratio (C max /C min ), and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance―voltage and current―voltage analyses. It showed that the (NH 4 ) 2 S/P 2 S 5 -treated sample had the most excellent surface state and C max /C min and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by (NH 4 ) 2 S/P 2 S 5 and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications. |
| Databáze: | OpenAIRE |
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