| Autor: |
Kyongsik Yeom, Hyo-sang Lee, Ji-Sung Kim, Young-cheon Jeong, Gitae Jeong, Yong-Kyu Lee, Minji Seo, S. L. Cho, MyeongHee Oh, Eunmi Hong, HyunChang Lee, Seong-Ho Yoon, Hyuk-Jun Sung, Sangjin Lee, Joonsuk Kim, Jinchul Park, D.H. Kim, Cheol-min Kim, E. S. Jung, Hong-Kook Min, Jongsung Woo, Chang-Min Jeon, Jong-Shik Yoon, Ki-Chul Park |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Symposium on VLSI Technology. |
| Popis: |
Based on robust 28-nm embedded flash (eFlash) process, IoT One-chip for high-speed and low power applications which MCU-chip (10Mb eFlash) and connectivity-chip (BLE/Zigbee) are integrated for the first time. By introducing new devices on 28-nm low-power eFlash process, high-speed ( $> 40\text{MHz}$ random read), ultra-low power $( sleep mode current, 10/13mA RF current at $\text{Tx}/\text{Rx}$ mode) and robust reliability $(-40\sim 125^{\text{o}}\text{C}$ stable operation, $100\text{K}$ cycle endurance, 150C/RT retention up to 200K hours) are achieved. LDD-first IO transistor with low Vth (~0.5V) for low-Vdd (~1.0V) operation [1] and ultra-low leakage (ULL) SRAM bit-cell (0.1x vs. normal) supporting low sleep mode chip current are applied to extend battery life-time. Stable endurance and high (/low)-temperature retention after cycling stress are achieved by robust split-gate type eFlash cell. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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