Epitaxial orientation of PtSi grown by Pt deposition on heated Si(001) substrate

Autor:	K. Konuma, H. Utsumi
Rok vydání:	1994
Předmět:	Crystallography Materials science Silicon chemistry Superlattice X-ray crystallography General Physics and Astronomy chemistry.chemical_element Crystal growth Substrate (electronics) Thin film Epitaxy Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 76:2181-2184
ISSN:	1089-7550 0021-8979
Popis:	PtSi film epitaxial orientation and morphology depend greatly on the Si(001) substrate temperature during Pt deposition. 15 nm Pt films were evaporated on the heated substrate in room‐temperature to the 1100 K range. The PtSi on the Si substrate forms a continuous film below 850 K and forms islands at above 920 K. In the entire heated range, except for around 1000 K, the dominant epitaxial orientation is PtSi(110)‖‖Si(001) (A orientation). At around 1000 K, the dominant orientation is PtSi(121)‖‖Si(001) (called B orientation). In the range from 920 to 950 K, B orientation grains partially exist in the predominant A orientation. Below 1000 K, the predominant factor governing the epitaxial orientation is area mismatch, which is the difference between the PtSi and Si superlattice areas at the interface. The predominantly A‐oriented grains observed at above 1050 K can be explained by the superlattice area mismatch concept.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::df4a074efa6be7bae584e1d95a191e74 https://doi.org/10.1063/1.357631 Zobrazit plný text záznamu