Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of Ga+ ions
| Autor: | V. K. Nevolin, Anna Volkova, A. A. Zaitsev, A. A. Chudinov, K. A. Tsarik, I. I. Bobrinetskii |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Plasma etching Ion beam Silicon business.industry chemistry.chemical_element Nanotechnology Condensed Matter Physics Focused ion beam Electronic Optical and Magnetic Materials Ion beam deposition chemistry Etching (microfabrication) Materials Chemistry Optoelectronics Dry etching Electrical and Electronic Engineering Reactive-ion etching business |
| Zdroj: | Russian Microelectronics. 44:482-486 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | A method of formation of three-dimensional silicon-based nanostructures by a mask formation with the use of focused ion beam, for following plasma etching, is presented. A surface relief pattern, with depths of less than 80 nm, dependent on a dose of interstitial ions, was formed by plasma etching of an undoped area. A range of values of a dose of Ga+ ion beam for silicon doping was determined. Three-dimensional silicon-based structures with linear dimensions of about 100 nanometers were obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink