Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of Ga+ ions

Autor: V. K. Nevolin, Anna Volkova, A. A. Zaitsev, A. A. Chudinov, K. A. Tsarik, I. I. Bobrinetskii
Rok vydání: 2015
Předmět:
Zdroj: Russian Microelectronics. 44:482-486
ISSN: 1608-3415
1063-7397
Popis: A method of formation of three-dimensional silicon-based nanostructures by a mask formation with the use of focused ion beam, for following plasma etching, is presented. A surface relief pattern, with depths of less than 80 nm, dependent on a dose of interstitial ions, was formed by plasma etching of an undoped area. A range of values of a dose of Ga+ ion beam for silicon doping was determined. Three-dimensional silicon-based structures with linear dimensions of about 100 nanometers were obtained.
Databáze: OpenAIRE