Defects in swift heavy ion irradiated n-4H-SiC
| Autor: | Jackie M. Nel, Moshawe J. Madito, Mmantsae Diale, F.D. Auret, Thulani Thokozani Hlatshwayo, Shandirai Malven Tunhuma |
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| Rok vydání: | 2019 |
| Předmět: |
Nuclear and High Energy Physics
Deep-level transient spectroscopy Doping Analytical chemistry 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology 01 natural sciences Fluence Ion symbols.namesake Swift heavy ion 0103 physical sciences symbols Irradiation 010306 general physics 0210 nano-technology Raman spectroscopy Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:119-124 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2018.11.046 |
| Popis: | We have used confocal Raman spectroscopy, atomic force microscopy (AFM), Binary collision approximations and Deep level transient spectroscopy (DLTS) to study the defects introduced in n-type 4H-SiC by 167 MeV Xe26+ ions (swift heavy ions (SHIs)). Moderately doped epitaxial layers were irradiated with SHIs to a fluence of 5 × 1011 cm−2 at room temperature. Raman spectroscopy was used to investigate the effects of irradiation on the crystal structure. Raman intensity reduced after irradiation but the overall bond structure was conserved. Cluster spectra from confocal Raman spectroscopy showed a damage impact that was consistent with SRIM simulations. AFM showed that the incident radiation resulted in elongated protrusions. The virgin samples contained the E0.09, E0.12, E0.15 and E0.65 as the only electrically active defects. After irradiation the E0.40 and E0.71 defects were introduced. |
| Databáze: | OpenAIRE |
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