Characterization of as-deposited and annealed indium oxide thin films

Autor: B.R. Marathe, M.G. Takwale, S. Mirzapour, V. G. Bhide, Seyed Mohammad Rozati
Rok vydání: 1993
Předmět:
Zdroj: Materials Chemistry and Physics. 34:119-122
ISSN: 0254-0584
DOI: 10.1016/0254-0584(93)90201-v
Popis: Indium oxide films were deposited by an electron beam evaporation technique on Corning® glass substrates at various substrate temperatures ranging from 25 to 300 °C. As-deposited films appeared to be dark or semitransparent; whether they were amorphous or polycrystalline depended on the substrate temperature. In order to obtain good opto-electronic properties, these films were subjected to a heat treatment in air at various temperatures ranging from 250 to 600 °C. The In2O3 film prepared at 25 °C and annealed at 500 °C in air was found to be a good transparent conductor. The optical, electrical and structural properties of films deposited at various substrate temperatures and annealed at various temperatures are discussed.
Databáze: OpenAIRE