Characterization of as-deposited and annealed indium oxide thin films
Autor: | B.R. Marathe, M.G. Takwale, S. Mirzapour, V. G. Bhide, Seyed Mohammad Rozati |
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Rok vydání: | 1993 |
Předmět: |
Materials science
business.industry Oxide chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Electron beam physical vapor deposition Characterization (materials science) Amorphous solid chemistry.chemical_compound Optics chemistry General Materials Science Crystallite Thin film Composite material business Indium |
Zdroj: | Materials Chemistry and Physics. 34:119-122 |
ISSN: | 0254-0584 |
DOI: | 10.1016/0254-0584(93)90201-v |
Popis: | Indium oxide films were deposited by an electron beam evaporation technique on Corning® glass substrates at various substrate temperatures ranging from 25 to 300 °C. As-deposited films appeared to be dark or semitransparent; whether they were amorphous or polycrystalline depended on the substrate temperature. In order to obtain good opto-electronic properties, these films were subjected to a heat treatment in air at various temperatures ranging from 250 to 600 °C. The In2O3 film prepared at 25 °C and annealed at 500 °C in air was found to be a good transparent conductor. The optical, electrical and structural properties of films deposited at various substrate temperatures and annealed at various temperatures are discussed. |
Databáze: | OpenAIRE |
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