Cubic GaN Film Growth Using AlN/GaN Ordered Alloy by RF Plasma‐Assisted Molecular Beam Epitaxy

Autor:	Atsushi Shigemori, Kiyoshi Takahashi, K. Ishida, Ryuhei Kimura, Junichi Shike
Rok vydání:	2002
Předmět:	Diffraction Reflection (mathematics) Photoluminescence Materials science Electron diffraction business.industry Alloy engineering Optoelectronics Plasma engineering.material business Molecular beam epitaxy
Zdroj:	physica status solidi (c). :170-174
ISSN:	1610-1634
DOI:	10.1002/pssc.200390015
Popis:	Cubic GaN films were grown on GaAs (100) using a newly introduced AlN/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations, photoluminescence (14 K) and X-ray diffraction measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::df1c892c7f53f8a9626fe3fac5fc77fb https://doi.org/10.1002/pssc.200390015 Zobrazit plný text záznamu