Nanocrystal Formation Via Yttrium Ion Implantation into Sapphire

Autor:	J.M. Hampikian, E. M. Hunt, David B. Poker
Rok vydání:	1995
Předmět:	Crystallography Lattice constant Ion implantation Materials science chemistry Nanocrystal Transmission electron microscopy Energy-dispersive X-ray spectroscopy chemistry.chemical_element Yttrium Single crystal Amorphous solid
Zdroj:	MRS Proceedings. 396
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-396-403
Popis:	Ion implantation has been used to form nanocrystals in the near surface of single crystal A12O3. The ion fluence was 5 x 1016 Y+/cm2, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of ∼13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice pmeter of ∼4.1 A ± .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::df1b91f8cbb4d7d1582fb2c5b2120008 https://doi.org/10.1557/proc-396-403 Zobrazit plný text záznamu Full text from SpringerLink