Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy
| Autor: | H. P. Gislason, D. Seghier |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Aluminium nitride Mechanical Engineering Photoconductivity Gallium nitride Heterojunction Chemical vapor deposition Condensed Matter Physics Background noise chemistry.chemical_compound Optics chemistry Mechanics of Materials Optoelectronics General Materials Science Metalorganic vapour phase epitaxy business Extrinsic semiconductor |
| Zdroj: | Materials Science in Semiconductor Processing. 9:41-44 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2006.01.065 |
| Popis: | We present experimental results on the noise of Au/Al 0.3 Ga 0.7 N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated by the 1 /f noise. A generation–recombination component of the noise is observed in the annealed samples. It originates from a local center present in the AlGaN layer in the vicinity of the GaN layer. It has a large capture energy barrier and disappears from the noise spectrum after illumination which suggests that it has a DX-like nature. This center may be partially responsible for the persistent photoconductivity and the collapse of the dc drain current observed in AlGaN/GaN heterostructures. |
| Databáze: | OpenAIRE |
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