Contact Resistivity of the TCO/a-Si:H/c-Si Heterojunction
| Autor: | Luderer, C., Messmer, C., Hermle, M., Bivour, M. |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20192019-2dv.1.48 |
| Popis: | 36th European Photovoltaic Solar Energy Conference and Exhibition; 538-540 Transport related losses in the heterojunction stack are a limitation on the power output of silicon heterojunction solar cells. We present contact resistivity measurements of the electron and hole contact of our silicon heterojunctions, which enable fill factors above 80 % on cell level. Our systematic investigation of the influence of different layers reveals, that the intrinsic a-Si:H and the ITO layer significantly increases transport losses, especially for the hole contact. Experimental results are supported by good correlation with numerical device simulation. |
| Databáze: | OpenAIRE |
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