Reverse Temperature Dependence of Circuit Performance in High- $\kappa$/Metal-Gate Technology

Autor:	Shu-Jen Han, Dechao Guo, Anda Mocuta, William K. Henson, Xinlin Wang, K. Rim
Rok vydání:	2009
Předmět:	Electron mobility Materials science business.industry Electrical engineering Ring oscillator Electronic Optical and Magnetic Materials Current limiting CMOS MOSFET Optoelectronics Electrical and Electronic Engineering business Metal gate High-κ dielectric Voltage
Zdroj:	IEEE Electron Device Letters. 30:1344-1346
ISSN:	1558-0563 0741-3106
Popis:	The temperature dependence of ring-oscillator delay of high-kappa /metal-gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::def050f94ed1663edef5e3836beed5d5 https://doi.org/10.1109/led.2009.2033082 Zobrazit plný text záznamu