Graphene/SiO2/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters
| Autor: | Meng-Lin Lu, Tai-Chun Pan, Wei-Chun Tan, Yang-Fang Chen, Ying-Jay Yang, Che-Wei Chang |
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| Rok vydání: | 2013 |
| Předmět: |
Fabrication
Materials science business.industry Graphene Electrical element Substrate (electronics) Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Biomaterials law Electrochemistry Optoelectronics business Tunnel injection Diode Light-emitting diode |
| Zdroj: | Advanced Functional Materials. 23:4043-4048 |
| ISSN: | 1616-301X |
| Popis: | Advanced materials that combine novel functionality and ease of applicability are central to the development of light-emitting diodes (LEDs), which is of ever increasing commercial importance. Here a new metal-insulator-semiconductor (MIS) LED structure that combines economical fabrication with novel device properties is reported. The presented MIS-LED consists of a graphene electrode on p-GaN substrate separated by an insulating SiO2 layer. It is found that the MIS-LED possesses a unique tunability of the electroluminescence spectra depending on the bias conditions. Tunnel injection from graphene into the p-GaN can explain the difference in luminescence spectra under forward and reverse bias. The demonstrated MIS-LED expands the use of graphene and also possibly allows the direct integration of light emitters with other circuit elements. |
| Databáze: | OpenAIRE |
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