A new sub-micron trench cell concept in ultrathin wafer technology for next generation 1200 V IGBTs
| Autor: | Alexander Philippou, Andreas Härtl, Christian Jaeger, Antonio Ve Ilei, Johannes Georg Laven |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology Energy consumption 01 natural sciences Power (physics) Electrification Power electronics 0103 physical sciences Trench 0202 electrical engineering electronic engineering information engineering Wafer business Short circuit Efficient energy use |
| Zdroj: | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD). |
| DOI: | 10.23919/ispsd.2017.7988895 |
| Popis: | The overall growing trend towards electrification and, at the same time, the urgent need to minimize energy consumption strongly requires higher energy efficiency in power electronics. We present a new technology concept for next generation 1200 V IGBTs with vastly reduced overall power losses using an optimized micro-pattern trench (MPT) cell design with sub-micron mesas. Further important parameters relevant for inverters driving electrical machines were optimized, including turn-off softness, dv/dt-controllability, and short circuit capability, providing a right-fit solution to customer requirements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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