Trends in silicon germanium BiCMOS integration and reliability

Autor:	J. Dunn, Steven H. Voldman, Gregory G. Freeman, K. Watson, Alvin J. Joseph, S. Subbanna, R. Johnson, David C. Ahlgren, D. L. Harame, S. St Onge, Natalie B. Feilchenfeld
Rok vydání:	2002
Předmět:	Electrostatic discharge Materials science Transistor Hardware_PERFORMANCEANDRELIABILITY BiCMOS Bicmos technology Silicon-germanium law.invention chemistry.chemical_compound Reliability (semiconductor) chemistry law Hardware_INTEGRATEDCIRCUITS Electronic engineering Common emitter Voltage
Zdroj:	2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
Popis:	A base-after-gate integration scheme has been developed fora 0.25 /spl mu/m SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using SiGe for applications with high collector-base voltage with high emitter current are also explored. Finally, the ESD characteristics of the SiGe BiCMOS technology elements are summarized.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ded687dd9a80dd507b18e5dd56ef13a8 https://doi.org/10.1109/relphy.2000.843921 Zobrazit plný text záznamu