Initial stages of Bi/Ge(111) interface formation: A detailed STM study
| Autor: | A. Shchyrba, P.V. Melnik, M.G. Nakhodkin, A. Goriachko, S.P. Kulyk |
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| Rok vydání: | 2011 |
| Předmět: |
Surface diffusion
Materials science Condensed matter physics Annealing (metallurgy) Fermi level Nucleation chemistry.chemical_element Germanium Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Bismuth law.invention Metal symbols.namesake Crystallography chemistry law visual_art Materials Chemistry symbols visual_art.visual_art_medium Scanning tunneling microscope |
| Zdroj: | Surface Science. 605:1771-1777 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2011.06.004 |
| Popis: | We present a detailed scanning tunneling microscopy investigation of ultra-thin Bi films on Ge(111)-c(2 × 8) in the range up to 1.5 ML. During growth at 300 K, the second/third atomic layer of Bi already starts to nucleate before the completion of the first/second layer correspondingly. Laterally isolated first layer Bi atoms, clusters and islands posses no electronic states in the range ~ 0.5 eV above the Fermi level of the substrate. In contrast, metallic electronic properties are found for continuous films when Bi coverage nears 1 ML. Annealing the as-deposited Bi films at 450 K causes lateral redistribution of Bi due to surface diffusion: coarsening of two-dimensional Bi islands with no long range order in the adsorbate layer is observed up to 1 ML; long range ordered (√3 × √3)-Bi/Ge(111) interface plus three-dimensional Bi clusters are obtained for coverages in excess of 1 ML. |
| Databáze: | OpenAIRE |
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