Dependence of hot carrier luminescence on barrier thickness in GaAs/AlGaAs superlattices and multiple quantum wells
| Autor: | Arthur J. Nozik, D. J. Dunlavy, Brian Keyes, Richard K. Ahrenkiel, C. A. Parsons |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Condensed Matter::Quantum Gases
Quenching Materials science Condensed matter physics Condensed Matter::Other Multiple quantum Superlattice General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Boltzmann distribution Condensed Matter::Materials Science Delocalized electron Materials Chemistry Emission spectrum Luminescence Gaas algaas |
| Zdroj: | Solid State Communications. 75:297-301 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(90)90900-v |
| Popis: | Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/Al x Ga 1-x As superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined by fitting the tails of the emission spectra to a Boltzmann distribution. With strong miniband formation in superlattices hot electron cooling rates were found to be faster than in MQWs and to vary markedly between miniband samples. These results are believed to be related to the delocalization of carriers in the miniband regime, with concomitant increases in the probability for non-radiative quenching of hot electron emission at surfaces and interfaces. Bulk GaAs was found to have a much faster hot electron cooling rate compared to any of the quantized GaAs structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|