Electronic and optical properties of La-doped Sr3Ir2O7 epitaxial thin films
| Autor: | Jared M. Johnson, Ambrose Seo, Jinwoo Hwang, Gang Cao, Maryam Souri, Joseph W. Brill, J. Thompson, J. Terzic, J. H. Gruenewald, J. G. Connell |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Superconductivity
Materials science Physics and Astronomy (miscellaneous) Mott insulator Doping 02 engineering and technology Spin–orbit interaction Electronic structure 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter::Materials Science Crystallography Condensed Matter::Superconductivity 0103 physical sciences Scanning transmission electron microscopy X-ray crystallography General Materials Science Thin film 010306 general physics 0210 nano-technology |
| Zdroj: | Physical Review Materials. 2 |
| ISSN: | 2475-9953 |
| Popis: | We have investigated structural, transport, and optical properties of tensile strained ${(\mathrm{S}{\mathrm{r}}_{1\ensuremath{-}x}\mathrm{L}{\mathrm{a}}_{x})}_{3}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$ ($x=0$, 0.025, 0.05) epitaxial thin films. While high-${T}_{\mathrm{c}}$ superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped $\mathrm{S}{\mathrm{r}}_{3}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$ thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|