The Electrical Properties of Unidirectional Metal-Induced Lateral Crystallized Polycrystalline-Silicon Thin-Film Transistors
| Autor: | Shin-Hee Han, Seung-Ki Joo, Young-Su Kim, Nam-Kyu Song, Min-Sun Kim |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) business.industry Transistor chemistry.chemical_element engineering.material Crystallization rate Electronic Optical and Magnetic Materials law.invention Metal Polycrystalline silicon chemistry Thin-film transistor law visual_art engineering Electronic engineering visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering Crystallization business |
| Zdroj: | IEEE Transactions on Electron Devices. 54:1420-1424 |
| ISSN: | 0018-9383 |
| Popis: | It has been known that adjacent Pd enhances the crystallization rate in Ni metal-induced lateral crystallization (Ni-MILC) and this knowledge has been used to fabricate the unidirectional MILC thin-film transistors (TFTs), which eliminate the boundary formed at the center of TFT channel in a normal MILC TFTs. It is discovered that the MILC/MILC boundary (MMB) is responsible for the high leakage current and low field- effect mobility. The electrical properties of unidirectional MILC TFTs (Width/Length = 10/10 mum) improved considerably comparing to those of MILC TFTs containing the MMB. The leakage current and field-effect mobility, which have been regarded as obstacles for industrialization of the MILC process, measure to be 2.1 X 10-11 A and 83 cm2/ V ldr s, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|