Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC
| Autor: | Hiroshi Yoshizaki, Junichi Koike, Atsuko Sekiguchi, Kenichiro Terui |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Phase transition
Materials science Kirkendall effect Growth kinetics Annealing (metallurgy) Mechanical Engineering chemistry.chemical_element Condensed Matter Physics Thermal diffusivity chemistry.chemical_compound Nickel Crystallography chemistry Chemical engineering Mechanics of Materials Silicon carbide General Materials Science Growth rate |
| Zdroj: | Materials Science Forum. :631-634 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.600-603.631 |
| Popis: | The reaction behavior and growth kinetic of reaction layer were investigated in the Ni contact to n-type 6H-SiC. Annealing was performed at temperature in the range between 800 and 1000 °C for 1 to 240 minutes in Ar atmosphere. The interface reaction of Ni/SiC starts with Ni diffusion into SiC. Ni3Si is initially precipitated and subsequently forms the continuous layer of d-Ni2Si. Kirkendall voids are formed at the reaction front. Carbon is segregated in the interface layer of nickel silicide. The growth rate of the interface layer follows a parabolic law, meaning that the growth rate is controlled by diffusion. The growth occurs in two steps at all examined temperatures: a fast growth is followed by a slow growth. In addition, in the late stage, the growth rate changes dramatically below and above 850°C. The observed growth kinetic can be explained by the difference of Ni diffusivity and the required concentration change for phase transition depending on the phase composition and structure. The d-Ni2Si is formed in the early stage, while the e-Ni3Si2 and q-Ni2Si are formed in the late stage below and above 850°C, respectively. |
| Databáze: | OpenAIRE |
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