Electrical properties of thin silicon space solar cells
| Autor: | T. Matsutani, Tadashi Hisamatsu, Hidetoshi Washio, Yoshifumi Tonomura, Sumio Matsuda, A. Suzuki, Y. Yamamoto, Tatsuo Saga, T. Katsu |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Surface (mathematics)
Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Substrate (electronics) Quantum dot solar cell Polymer solar cell Surfaces Coatings and Films Electronic Optical and Magnetic Materials Monocrystalline silicon Optics chemistry Optoelectronics Plasmonic solar cell Electronic band structure business |
| Zdroj: | Solar Energy Materials and Solar Cells. 35:105-111 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/0927-0248(94)90129-5 |
| Popis: | Thin silicon solar cells with a Non-Reflective front Surface (NRS), a passivated rear surface and locally diffused BSF structure have been considered to be hopeful candidates as space solar cells of the next generation. In this paper, the electrical properties of textured surface cells and flat (non-textured) surface cells are compared and the surface recombination velocity S e of these cells are discussed. Then, the electrical properties of 10 Ω cm substrate cells and 2 Ω cm substrate cells are compared and the carrier recombination at the rear Si/SiO 2 interface is discussed using energy band diagrams. |
| Databáze: | OpenAIRE |
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