| Autor: |
H. Neubrand, R. Boot, M. Fullmann, A. Boose, R. Constapel |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics. |
| DOI: |
10.1109/ispsd.1994.583671 |
| Popis: |
Simulated temperature distributions for SOI-structures with various film thicknesses for different operating conditions (on state, turn-off and pulse overload) and different SOI sheet thicknesses (20 /spl mu/m, 5 /spl mu/m) are presented and discussed. The temperature increase was in the range between 5 K and 400 K. The calculated results have been verified experimentally for a fabricated device. An important result is the reduced pulse overload capacity of thin SOI-devices in the 10 /spl mu/s to 100 /spl mu/s range. Consequences for application of SOI-devices are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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