Frequency pressure transducer with a sensitivity of mem capacitor on the basis of transistor structure with negative resistance
| Autor: | Akmaral Tleshova, Oleksandr Volodymyrovych Osadchuk, Iaroslav O. Osadchuk, Żaklin Grądz, T. Zyska, Abenov Arman, Batyrbek Suleimenov |
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| Rok vydání: | 2017 |
| Předmět: |
Microelectromechanical systems
Materials science business.industry Negative resistance Acoustics Transistor Electrical engineering 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Pressure sensor 0104 chemical sciences law.invention Moment (mathematics) Capacitor law 0210 nano-technology business Sensitivity (electronics) Voltage |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2280958 |
| Popis: | In the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenso sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa. |
| Databáze: | OpenAIRE |
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