High opto-electronic quality n-type single-crystalline-like GaAs thin films on flexible metal substrates
| Autor: | Pavel Dutta, Venkat Selvamanickam, Sara Pouladi, Ying Gao, Sicong Sun, Yan Yao, Ali Khadimallah, Monika Rathi, Yongkuan Li, Jae-Hyun Ryou, Phil Ahrenkiel, Devendra Khatiwada, Nan Zheng |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Dopant business.industry Doping Nanotechnology 02 engineering and technology General Chemistry Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Materials Chemistry Optoelectronics Wafer Metalorganic vapour phase epitaxy Texture (crystalline) Thin film 0210 nano-technology business |
| Zdroj: | Journal of Materials Chemistry C. 5:7919-7926 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/c7tc02443f |
| Popis: | In this report, we present a detailed study of the microstructural and opto-electronic properties of single-crystalline-like n-type GaAs thin films directly grown on inexpensive flexible metal substrates by metal–organic chemical vapor deposition (MOCVD). The ion-beam-assisted deposition technique (IBAD) was used to obtain highly oriented single-crystalline-like buffer templates on polycrystalline metal substrates. Single-crystalline-like n-type GaAs films were achieved with sharp biaxial texture and strong (00l) crystallographic orientation. Controllable n-doping from 1016–1019 cm−3 was achieved using silane (SiH4) as the dopant precursor. The GaAs films were granular with a wide distribution of grain sizes ranging from 1 to 4 μm. Strong optical photoluminescence at room temperature was obtained and the peak intensity increased with increasing doping level. Electron mobility values as high as 1320 cm2 V−1 s−1 were obtained, one of the highest reported so far for GaAs films grown directly on unconventional substrates. Unlike GaAs on wafer substrates, the electron mobility of single-crystalline-like GaAs films significantly increased with doping which appears to be controlled by the electrical properties of the grain boundaries. High-mobility n-GaAs films on low-cost metal substrates are promising for flexible electronic and photonic device applications. |
| Databáze: | OpenAIRE |
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