Novel Buried Bitline Integration for compact Cell Design in High-Performance embedded Flash Memory with Deep Trench Isolation
Autor: | R. Kakoschke, Armin Tilke, Martin Stiftinger, Kyung Joon Han, Sung-Rae Kim, N. Chan, L. Pescini, Danny Pak-Chum Shum |
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Rok vydání: | 2006 |
Předmět: | |
Zdroj: | 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop. |
DOI: | 10.1109/.2006.1629478 |
Popis: | In this work, we present a novel buried BL (BBL) concept that links the source contacts of each individual BL via the isolated p-well; thus effectively eliminating one metal line per BL and reducing overall cell size. In comparison to the UCPE cell, a conservative cell size shrink of about 40% can be achieved from a standard embedded 21F2 DT-UCPE-cell. The schematic cell layout is shown and comparison to that of a conventional UCP-layout is presented |
Databáze: | OpenAIRE |
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