Novel Buried Bitline Integration for compact Cell Design in High-Performance embedded Flash Memory with Deep Trench Isolation

Autor: R. Kakoschke, Armin Tilke, Martin Stiftinger, Kyung Joon Han, Sung-Rae Kim, N. Chan, L. Pescini, Danny Pak-Chum Shum
Rok vydání: 2006
Předmět:
Zdroj: 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
DOI: 10.1109/.2006.1629478
Popis: In this work, we present a novel buried BL (BBL) concept that links the source contacts of each individual BL via the isolated p-well; thus effectively eliminating one metal line per BL and reducing overall cell size. In comparison to the UCPE cell, a conservative cell size shrink of about 40% can be achieved from a standard embedded 21F2 DT-UCPE-cell. The schematic cell layout is shown and comparison to that of a conventional UCP-layout is presented
Databáze: OpenAIRE
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