Growth of single crystal CoSi2 layers at room temperature

Autor:	F. Schrey, R.T. Tung
Rok vydání:	1989
Předmět:	Thin layers Materials science Annealing (metallurgy) business.industry Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound Crystallography chemistry Silicide Materials Chemistry Optoelectronics Thin film business Single crystal
Zdroj:	Journal of Crystal Growth. 95:455-460
ISSN:	0022-0248
DOI:	10.1016/0022-0248(89)90441-7
Popis:	We will describe recent results concerning the growth of high quality single crystal CoSi 2 thin layers on Si(111) by MBE. The use of unusually low MBE temperature (near room temperature) and the use of template layers with low defect densities are the keys in the improved epitaxial perfection. Attention is paid to the relationship between the surface step density of the substrate and the dislocation density in the silicide thin film. Procedures which reduce the dislocation density will be introduced. The change of the silicide structure upon annealing will be mentioned.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::de942faf69c8f917ad345486a35067bb https://doi.org/10.1016/0022-0248(89)90441-7 Zobrazit plný text záznamu