Study of electrical properties in the insulating samples 70Ge: Ga p-type at very low temperatures
| Autor: | Asmae Chakhmane, Abdelhamid El Kaaouachi, M. Errai, Hassan El Idrissi |
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| Rok vydání: | 2017 |
| Předmět: |
Range (particle radiation)
Materials science Condensed matter physics Fermi level General Physics and Astronomy 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Variable-range hopping symbols.namesake Electrical transport Electrical resistivity and conductivity 0103 physical sciences symbols Density of states Coulomb 010306 general physics 0210 nano-technology |
| Zdroj: | Chinese Journal of Physics. 55:2283-2290 |
| ISSN: | 0577-9073 |
| DOI: | 10.1016/j.cjph.2017.09.013 |
| Popis: | Experimental results on resistivity of the insulating samples 70Ge: Ga p-type at low temperatures has been analyzed in the insulating side of the Metal–Insulator Transition (MIT). The resistivity measurements were obtained in the temperature range 0.05–2.7 K. The five samples studied have Ga concentrations n ranging from 0.302 × 1017 to 1.84 × 1017 cm−3. On the insulating side of the MIT, the study of the effect of low temperatures T on the electrical transport shows that the temperature dependence of the electrical conductivity is found to follow the Efros–Shklovskii Variable Range Hopping regime with T−1/2. This behavior showed that long range electron-electron interaction reduces the Density Of State of carriers at the Fermi level and creates the Coulomb gap. The data are for a 70Ge:Ga sample prepared and reported by Itoh et al. [22] . |
| Databáze: | OpenAIRE |
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