1H Nuclear Magnetic Resonance of Thermally Grown Silicon Dioxide Films
| Autor: | K. K. Gleason, D. H. Levy |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
Hydrogen Renewable Energy Sustainability and the Environment Silicon dioxide Spin–lattice relaxation Oxide chemistry.chemical_element Condensed Matter Physics Spectral line Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Nuclear magnetic resonance chemistry Materials Chemistry Electrochemistry Proton NMR Thin film Inorganic compound |
| Zdroj: | Journal of The Electrochemical Society. 140:797-800 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2056161 |
| Popis: | 1 H NMR spectra were obtained for silicon dioxide films that were thermally grown under clean room conditions. Bulk hydrogen in a concentration of approximately 1.2×10 198 H/cm 3 was detected in a 1.1-μm thick wet oxide grown at 1000 o C. The relatively long (∼15 s) spin-lattice relaxation time for this sample is consistent with bulk hydrogen, while a narrow 3 kHz half-width at half maximum (HWHM) Gaussian line shape suggests that the majority of hydrogen in this film is well isolated. Thinner thermal oxides, own under a variety of conditions, were exposed to the ambient to assess the effects of sample aging |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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